SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
This article explains the switching behavior of power MOSFETs in practical application circuits and shows the reader/designer how to choose the right device for the application using the ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TPD7107F,” a gate driver switch IPD [1] that controls the conduction and shut-off of current supplied ...
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPM1R408RH,” an 80V N-channel power MOSFET ...
OMRON Electronic Components Europe has released new G3VH SiC-MOSFET relays with voltage ratings of 3,300V and 1,800V, delivering solid-state power-switching advantages at bus and battery voltages up ...
Toshiba launches an 80 V AI power MOSFET for data center power supplies, delivering lower power loss, improved cooling, and ...
A new approach to designing a synchronous rectifier will help engineers unlock efficiency gains that extend beyond ...
"With great power comes great responsibility," says Spider-Man's wise Uncle Ben. Who knew he was really talking about electronic design, FETs, source nets, and switching frequencies? Power MOSFETs are ...
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